Abstract
This chapter reviews recent literature on band offsets of dielectrics and semiconductors to gallium oxide and its ternary alloy, aluminum gallium oxide. Band diagram principles are reviewed, and an X-Ray photoelectron spectroscopy method for accurate band offset measurement is discussed. Interface state density measurements of Ga2O3 MOS capacitors are reviewed, and Terman method results for the HfO2/β-Ga2O3 and ZrO2/β-Ga2O3 are presented. Fowler-Nordheim tunneling model was used to fit the leakage current for the HfO2/β-Ga2O3 MOS structure. A need for new dielectrics with both wide bandgap and high dielectric constant is noted, and possible new directions for research are presented.
Author supplied keywords
- Aluminum gallium oxide
- Atomic layer deposition
- Band diagram
- Band offsets
- Capacitance-voltage
- Conduction band offset
- Depletion capacitance
- Dielectrics
- Energy gap
- Flat-band voltage
- Fowler-Nordheim tunneling
- Frequency dispersion
- Ga2o3
- Gallium oxide
- Interface charge
- Interface state density
- Leakage current
- MOS capacitor
- MOSCAP
- Power electronics
- Terman method
- Ultra-wide bandgap
- Valence band offset
- Wide bandgap
- X-Ray photoelectron spectroscopy
Cite
CITATION STYLE
Tadjer, M. J., Wheeler, V. D., & Shahin, D. I. (2020). Electrical properties 4: Band offsets and interface state density characterization of dielectric/Ga2O3 interfaces. In Springer Series in Materials Science (Vol. 293, pp. 443–459). Springer. https://doi.org/10.1007/978-3-030-37153-1_25
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