Spin-orbit assisted spin funnels in DC transport through a physically defined pMOS double quantum dot

Abstract

Holes in silicon exhibit an enhanced spin-orbit interaction compared to electrons, which can be used for electrical spin manipulation, but causes spin decoherence. Here we investigate the level detuning and magnetic field dependence of the leakage current through a physically-defined, p-type MOS double quantum dot in silicon. The current peak positions show spin funnel features which we attribute to mixing of the excited singlet with the spin-polarized triplet states, assisted by the strong spin-orbit interaction and interdot tunneling. The magnetic field angle dependence of these features may present an alternative way to extract the Landé g-factor anisotropy.