Variable depletion region in CMOS PN photodiode for I–V characteristic analysis

Abstract

In this paper, CMOS PN photodiode will be design and analyze for the application at 5 GHz optical communication. The paper will be divided in several section; the theory of CMOS PN photodiode and design with analysis of I–V characteristics of PN photodiode. A better understanding of the operation will be investigated through this. The PN photodiode will be design using Silvaco TCAD and will be characterize and experimental in I–V Characteristic. The effects of I–V characteristic will be analyzed in term of changes the width and light. Further understanding of I–V characteristic will be presents in this paper.