Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50% lower resistivity than those made with the conventional process. Using STEM analyses and phase field simulation, we also ascertained the reason for getting the very low resistivity Cu wires.
CITATION STYLE
Onuki, J., Tamahashi, K., Inami, T., Nagano, T., Sasajima, Y., & Ikeda, S. (2018). Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives. IEEE Journal of the Electron Devices Society, 6, 506–511. https://doi.org/10.1109/JEDS.2018.2808494
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