Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives

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Abstract

Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50% lower resistivity than those made with the conventional process. Using STEM analyses and phase field simulation, we also ascertained the reason for getting the very low resistivity Cu wires.

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Onuki, J., Tamahashi, K., Inami, T., Nagano, T., Sasajima, Y., & Ikeda, S. (2018). Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives. IEEE Journal of the Electron Devices Society, 6, 506–511. https://doi.org/10.1109/JEDS.2018.2808494

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