Temperature-insensitive photoluminescence emission wavelength in GaAs1-xBix/GaAs multiquantum wells

Abstract

GaAs1-xBix/GaAs multiquantum wells (MQWs) were grown on GaAs substrate by molecular beam epitaxy at a growth temperature of 350 oC. The MQWs showed clear satellite peaks and interference fringes between the satellite peaks in their high-resolution x-ray diffraction patterns. It was confirmed that photoluminescence (PL) emission wavelengths in GaAs1-xBix/GaAs MQWs have temperature insensitivity. The temperature coefficient of the PL peak energy in GaAs1-xBix/GaAs MQWs decreased with increasing GaBi molar fraction. For GaAs0.946Bi0.054/GaAs MQWs, the temperature coefficient of the PL peak energy was confirmed to be -0.19 meV/K (180-300 K) that is 40% of the value for the band gap of GaAs. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.