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SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties

Springer Science and Business Media Deutschland GmbH, (2005), 45-90
DOI: 10.1007/3-540-26462-0_3
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Irene, E. A. (2005). SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties. In Springer Series in Advanced Microelectronics (Vol. 16, pp. 45–90). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/3-540-26462-0_3

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