InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters

Abstract

The design of InGaN/dilute-As GaNAs interface quantum well (QW) leads to significant redshift in the transition wavelength with improvement in electron-hole wave function overlap and spontaneous emission rate as compared to that of the conventional In 0.2 Ga 0.8 N QW. By using self-consistent six-band k·p band formalism, the nitride active region consisting of 30 Å In 0.2 Ga 0.8 N and 10 Å GaN 0.95 As 0.05 interface QW leads to 623.52 nm emission wavelength in the red spectral regime. The utilization of 30 Å In 0.2 Ga 0.8 N/10 Å GaN 0.95 As 0.05 interface QW also leads to 8.5 times enhancement of spontaneous emission rate attributed by the improvement in electron-hole wavefunction overlap, as compared to that of conventional 30 Å In 0.35 Ga 0.65 N QW for red spectral regime. In addition, the transition wavelength of the interface QW is relatively unaffected by the thickness of the dilute-As GaNAs interface layer (beyond 10 Å). The analysis indicates the potential of using interface QW concept in nitride-based light-emitting diodes for long wavelength emission.