Third order Bragg grating filters in small SOI waveguides

Abstract

Third order grating filters fabricated in small Silicon-on-Insulator rib waveguides are demonstrated. Variations in grating etch depth and duty cycle are considered, and a maximum experimental reflection of 42% is demonstrated for gratings of 1500 μm in length, with a grating period of approximately 689nm and an etch depth of 200nm. Agreement with modeling is shown to be good.