Pulsed electron deposition is a very promising means for growing high quality thin films even for complicated oxides. By investigating the influence of deposition parameters like the substrate temperature, the oxygen pressure in the chamber, as well as the pulse frequency and energy of the electrons on the growth of ZnO, the evolution of the [0002] orientation has been revealed and highly [0002] oriented ZnO thin films were obtained on Si (100) substrates at suitable conditions. © 2011 The Japan Institute of Metals.
CITATION STYLE
Zhan, P., Li, Z., & Zhang, Z. (2011). Preparation of highly textured ZnO thin films by pulsed electron deposition. Materials Transactions, 52(9), 1764–1767. https://doi.org/10.2320/matertrans.M2011141
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