Improvement in reverse bias leakage current of Ni/4H-nSiC Schottky barrier diodes via MeV selective ion irradiation

Abstract

Present work deals with enhancement in reverse bias leakage current of Ni/4H-nSiC schottky barrier diode (SBD) via irradiating with 200 MeV 107Ag14+ ions at a fluence of 1013 ions/cm2 in selective way. Compared to pristine SBD, the reverse bias I-V characteristics of selectively irradiated SBD show significant improvement in leakage current. Role of quodons have been discussed to rationalize the performance of irradiated SBD.