Electronic states in Si nanocrystal thin films

Abstract

We report on the investigation of electronic states in hydrogenated nanocrystalline silicon (nc-Si:H) thin films through the electronic transitions by photocurrent measurements. Higher photocurrent response has been observed above the bulk Si band gap of 1.05 eV in the nc-Si:H films with larger crystalline faction. We attribute the high photocurrent response to the enhancement of the photocarrier transport due to the formation of the extended electronic states and the direct electronic transition caused by the discrete states. The interaction of the extended states and discrete states has been further demonstrated by the Fano resonance observed in the Raman scattering spectra. © 2009 American Institute of Physics.