C-Band Silicon Optical Modulator for High-Speed Optical Communication System

Abstract

The static performance of MOS-based silicon optical modulator has been depicted by analyzing the behavior of figure of merit (VπL) with respect to optical modulator height (h). The loss characteristics of modulator have also been shown. It has been observed that figure of merit is improved (from 3.5 to 1.5 V cm) by decreasing the modulator height (from 1600 to 800 nm) at the cost of an increase in loss coefficient (12–13.5 db/cm). These results are useful in designing high-speed silicon optical modulator, which is compatible with matured CMOS fabrication technology.