Fabrication and analysis of InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

Abstract

In this work, InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) based on the AlN/GaN superlattice channel have been demonstrated. The devices fabricated with the AlN/GaN superlattice channel perform superior characteristics over other relative devices consisted of the conventional single GaN channel. The effective channel-electron mobility, maximum drain current, ON-resistance, and the ION/IOFF ratio of the superlattice-channel-based MIS-HEMTs are approximately 932 cm2 V−1 s−1, 57 mA/mm, 62 Ω mm, and 108 and those of the conventional structure are 820 cm2 V−1 s−1, 48 mA/mm, 92 Ω mm, and 104, respectively. Additionally, this work has shown that the AlN/GaN superlattice channel has the ability to suppress leakage currents. As a result, the breakdown voltage of the device based on the superlattice structure without the back barrier is approximately 500 V, which is 430 V higher than that based on the single GaN channel.