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GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy

Applied Physics Letters (1997) 70(7) 802-804
DOI: 10.1063/1.118227
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Abstract

A GaInAsSb/AlGaAsSb multiple-quantum-well diode laser structure consisting of Al0.6Ga0.4As0.05Sb0.95 cladding layers, Al0.3Ga0.7As0.02Sb0.98 confining layers, and four 15-nm-thick Ga0.87In0.13As0.12Sb0.88 quantum wells with 20-nm-thick Al0.3Ga0.7As0.02Sb0.98 barrier layers was grown by organometallic vapor phase epitaxy. These lasers, emitting at 2.1 μm, have exhibited pulsed threshold current densities as low as 1.2 kA/cm2. © 1997 American Institute of Physics.

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APA

Wang, C. A., & Choi, H. K. (1997). GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 70(7), 802–804. https://doi.org/10.1063/1.118227

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