Electron scatterings in selectively doped n-AlGaAs/GaAs heterojunctions with high density self-assembled InAlAs antidots

Abstract

The scattering processes of two-dimensional electrons are studied in selectively doped n-AlGaAsGaAs heterojunctions where high density InAlAs anti dots are embedded in the vicinity of the GaAs channel. Mobilities μ are measured as a function of the electron concentrations Ns in two samples where the In1-xAlx As antidots are grown with different Al contents (x∼0.75 and 0.5). It is found that the Ns dependence of μ is strongly dependent on the Al content x of the embedded InAlAs dots, although their shapes and densities are almost same. The experimental data are well explained by theoretical models based on the surface profiles of the InAlAs dot layers. © 2008 American Institute of Physics.