Modeling Charge Control in Heterostructure Nanoscale Transistors

Abstract

We present a multi-scale methodology for the modeling of charge control in multigate field-effect-transistors (MuGFETs) comprising alternative channel materials, including heterostructures. Using SiGe and Ge as examples, we will show how bandstructure calculations for material parameters may be connected to technology-computer-aided design (TCAD) simulations for the ideal charge-voltage characteristics. Lastly, we outline a custom simulation tool that includes interface and border trap effects in addition to usual electrostatics and quantization.