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Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells

Journal of Physics: Conference Series (2018) 993(1)
DOI: 10.1088/1742-6596/993/1/012034
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Abstract

Volt-ampere and spectral characteristics of GaN/Si solar cell samples differing in interface layer preparation are obtained and analyzed. External quantum efficiency curves are experimentally determined via excitation with a 532 nm incident radiation wavelength. It is demonstrated that interface preparation has a significant influence on photovoltaic characteristics of the studied samples.

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Shugurov, K. U., Mozharov, A. M., Sapunov, G. A., Fedorov, V. V., Bolshakov, A. D., & Mukhin, I. S. (2018). Influence of interface layer preparation on the electrical and spectral characteristics of GaN/Si solar cells. In Journal of Physics: Conference Series (Vol. 993). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/993/1/012034

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