Variable intrinsic region in CMOS PIN photodiode for I–V characteristic analysis

Abstract

In this paper presented an investigation on I–V characteristic for CMOS PIN Photodiode. PIN diodes are widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device, especially in the intrinsic region. Two different I-layer thickness of PIN diode structure has been designed using Sentaurus Technology Computer Aided Design (TCAD) tools. The I-layer thickness (or width) is varied from 4 to 8 lm in order to investigate its effects on the current-voltage (I–V) characteristics. These structures were design based on CMOS process.