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Polarization Behavior in Thin Film Ferroelectric Capacitors at the Nanoscale

  • Gruverman A
Springer New York, (2010), 529-540
DOI: 10.1007/978-1-4419-7167-8_18
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Abstract

A physical principle of most of ferroelectric-based devices is electrically induced polarization reversal, which on a microscopic level occurs via the nucleation and growth of a large number of domains. The dynamic characteristics of domain growth as well as static...

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Gruverman, A. (2010). Polarization Behavior in Thin Film Ferroelectric Capacitors at the Nanoscale. In Scanning Probe Microscopy of Functional Materials (pp. 529–540). Springer New York. https://doi.org/10.1007/978-1-4419-7167-8_18

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