Low pressure chemical vapor deposition

Abstract

This chapter reviews the growth and material characterization of β-Ga2O3 grown via the low pressure chemical vapor deposition (LPCVD) method. The growth of β-Ga2O3 thin films, with Si as a demonstrated effective and controllable n-type dopant, on off-axis c-sapphire and native Ga2O3 substrates are discussed. LPCVD growth of β-Ga2O3 rod structures on 3C-SiC substrates is also discussed. From the crystal structural characterization and electron transport measurements, LPCVD-grown β-Ga2O3 materials exhibit high quality with great promises for high power electronic and short-wavelength optoelectronic device applications.