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GaN Substrate Material for III–V Semiconductor Epitaxy Growth

  • Zhang R
  • Xiu X
DOI: 10.1007/978-3-319-99211-2_1
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Abstract

The rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics accelerates the research, development, and commercial production of GaN substrate materials....

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Zhang, R., & Xiu, X. (2019). GaN Substrate Material for III–V Semiconductor Epitaxy Growth (pp. 1–39). https://doi.org/10.1007/978-3-319-99211-2_1

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