Abstract
The technique of facet modulation selective epitaxy and its application to quantum-well wire doublet fabrication are described. Successful fabrication of wire doublets in the AlxGa1-xAs material system is achieved. The smallest wire fabricated has a crescent cross section less than 140 Å thick and less than 1400 Å wide. Backscattered electron images, transmission electron micrographs, cathodoluminescence spectra, and spectrally resolved cathodoluminescence images of the wire doublets are presented.
Cite
CITATION STYLE
Tsai, C. S., Lebens, J. A., Ahn, C. C., Nouhi, A., & Vahala, K. J. (1992). Facet modulation selective epitaxy-a technique for quantum-well wire doublet fabrication. Applied Physics Letters, 60(2), 240–242. https://doi.org/10.1063/1.106976
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
