Extrinsically doped ZnO is widely used as a transparent conducting electrode and has the potential to alleviate the demand on the expensive but ubiquitous Sn-doped In2O3. Here, we report for the first time the synthesis and characterization of molybdenum-doped ZnO via a chemical vapor deposition route. Films were grown by using diethylzinc, molybdenum hexacarbonyl, toluene, and methanol. All films had visible light transmittance of ∼80% and electrical resistivity of 10−3 Ω·cm with the lowest resistivity of 2.6 × 10−3 Ω·cm observed for the 0.57 at. % Mo-doped film. X-ray photoelectron spectroscopy of the surface species and X-ray diffraction based calculations of the ZnO unit cell parameters suggest that Mo is present in the 4+ oxidation state, thus contributing two electrons for electrical conduction for every Zn2+ ion replaced in the lattice.
CITATION STYLE
Zhao, D., Sathasivam, S., Li, J., & Carmalt, C. J. (2020). Transparent and conductive molybdenum-doped ZnO thin films via chemical vapor deposition. ACS Applied Electronic Materials, 2(1), 120–125. https://doi.org/10.1021/acsaelm.9b00647
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