Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy

Abstract

This paper reviews progress in ultraviolet (UV) optoelectronic devices based on AlGaN films and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A growth mode, leading to band-structure potential fluctuations and resulting in AlGaN multiple QWs with internal quantum efficiency as high as 68%, is discussed. Atomic ordering in these alloys, which is different from that observed in traditional III-V alloys, and its effect on device performance is also addressed. Finally, progress in UV-light-emitting diodes, UV lasers, UV detectors, electroabsorption modulators, and distributed Bragg reflectors is presented.