Nanoscale transport imaging of active lateral devices: Static and frequency dependent modes

Abstract

Electronic and ionic transport in semiconductors, ionic conductors, and dielectrics underpins multiple applications from information technology devices to electroactive ceramics, batteries, fuel cells, and photovoltaics. In this chapter, we review the applications of Kelvin Probe Force Microscopy (or Scanning Surface Potential Microscopy) to map the charge transport in lateral devices. In these measurements, the SPM probe serves as a non-invasive probe of potentials created by the external electrodes, similar to the four-probe resistance measurements. We briefly discuss the invasiveness of such measurements, as exemplified by Scanning Gate Microscopy. We further discuss extensions of the KPFM based transport measurements to probe frequency dependent transport, an analog to impedance spectroscopy, and frequency mixing phenomena. Finally, implementations of lateral transport measurements in liquids are discussed.