Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

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Abstract

We report the growth of α-Ga2O3 on m-plane α-Al2O3 by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α-Ga2O3( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of α-Ga2O3. Through the use of In-mediated catalysis, growth rates over 0.2 μm h−1 and rocking curves with full width at half maxima of Δω ≈ 0.45° are achieved. Faceting is observed along the α-Ga2O3 film surface and explored through scanning transmission electron microscopy.

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McCandless, J. P., Rowe, D., Pieczulewski, N., Protasenko, V., Alonso-Orts, M., Williams, M. S., … Vogt, P. (2023). Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy. Japanese Journal of Applied Physics, 62(SF). https://doi.org/10.35848/1347-4065/acbe04

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