We developed a process to fabricate nanoscale metallic gate electrodes on scanning probe cantilevers, including on the irregular surface of protruding cantilever tips. The process includes a floating-layer technique to coat the cantilevers in an electron-beam resist. We demonstrate gate definition through a lift-off process and through an etching process. The cantilevers maintain a high force sensitivity after undergoing the patterning process. Our method allows the patterning of nanoscale devices on fragile scanning probes, extending their functionality as sensors.
CITATION STYLE
Forrer, L., Kamber, A., Knoll, A., Poggio, M., & Braakman, F. R. (2023). Electron-beam lithography of nanostructures at the tips of scanning probe cantilevers. AIP Advances, 13(3). https://doi.org/10.1063/5.0127665
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