Selective growth of single-crystalline ZnO nanowires on doped silicon

Abstract

We report the growth of single-crystalline ZnO nanowires on n - and p -type Si wafers by electrodeposition. On strongly doped n -type Si high-quality nanowires can be grown under similar conditions as used for metallic substrates. For low electron concentrations occurring in weakly n -type or in p -type wafers, nanowire growth is inhibited. This difference allows selective growth in strongly n -type areas. The inhibited growth on weakly n -type and p -type wafers can be improved by applying stronger cathodic electrode potentials or by illuminating the growth area. The wires on n-Si show efficient electroluminescence covering the visible and extending into the ultraviolet spectral range. © 2007 American Institute of Physics.