Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'

4Citations
Citations of this article
8Readers
Mendeley users who have this article in their library.
Get full text

Abstract

In this comment we demonstrate that the inclusion of field-induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron-hole bilayer tunnel field-effect transistor with symmetrically arranged gates (Jeong et al 2015 Semicond. Sci. Technol. 30 035021). Delayed alignment of the first electron and hole energy subbands in the central gated intrinsic channel region makes the onset of vertical band-to-band tunneling unattainable at low applied voltages for the metal workfunctions used by Jeong et al. Furthermore, quantization effects lead to the appearance of unavoidable parasitic lateral tunneling to the lightly doped drain-source region (LDD), which seriously degrades the switching behavior reported by Jeong et al.

Cite

CITATION STYLE

APA

Padilla, J. L., Alper, C., Gámiz, F., & Ionescu, A. M. (2015, October 26). Comment on “Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate.” Semiconductor Science and Technology. Institute of Physics Publishing. https://doi.org/10.1088/0268-1242/30/12/128001

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free