The impact of boron halo on phosphorus junction formation and stability

Abstract

In this paper we study the diffusion and activation behaviors of ultrashallow and high concentration of phosphorus (P) dopants in silicon processed with low-temperature thermal annealing. For the first time, significant improvement in dopant activation is observed when a boron halo implant is incorporated in the germanium preamorphized P junction. Our results are discussed in terms of the interactions between dopants and the point defects upon annealing. In addition, no rapid deactivation behavior is observed for the P-doped junction during the isochronal annealing cycle. © 2008 The Electrochemical Society.