Strain relief analysis of InN quantum dots grown on GaN

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Abstract

We present a study by transmission electron microscopy (TEM) of the strain state of individual InN quantum dots (QDs) grown on GaN substrates. Moiré fringe and high resolution TEM analyses showed that the QDs are almost fully relaxed due to the generation of a 60° misfit dislocation network at the InN/GaN interface. By applying the Geometric Phase Algorithm to plan-view high-resolution micrographs, we show that this network consists of three essentially non-interacting sets of misfit dislocations lying along the 〈1̄21̄0〉 directions. Close to the edge of the QD, the dislocations curve to meet the surface and form a network of threading dislocations surrounding the system.

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Lozano, J. G., Sánchez, A. M., García, R., Ruffenach, S., Briot, O., & González, D. (2007). Strain relief analysis of InN quantum dots grown on GaN. Nanoscale Research Letters, 2(9), 442–446. https://doi.org/10.1007/s11671-007-9080-6

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