The Study of Plasma Induced Damage on 65-nm Silicon on Thin BOX Transistor

Abstract

This paper reports new findings about the plasma-induced damage on silicon on thin buried oxide (BOX) transistor. The plasma charge collected by source or drain causes Vth shift, which depends on BOX thickness. In addition, the observation was made that the plasma charge collected by an antenna which is connected to the gate electrode has the same degradation effect as an antenna with the same size but being connected to drain or source. The mechanism of this phenomenon is investigated with various test structures.