Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

Abstract

Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the polarization effect and the short distance between the 2DEG channel and the surface can improve the sensitivity of the biosensors. The high thermal and chemical stability can also benefit HEMT-based biosensors’ operation under, for example, high temperatures and chemically harsh environments. This makes creating biosensors with excellent sensitivity, selectivity, reliability, and repeatability achievable using commercialized semiconductor materials. To synthesize the recent developments and advantages in this research field, we review the various AlGaN/GaN HEMT-based biosensors’ structures, operations mechanisms, and applications. This review will help new researchers to learn the basic information about the topic and aid in the development of next-generation of AlGaN/GaN HEMT-based biosensors.