Recent Progress in Theoretical Study of Formation of Semiconductor Surfaces and Interfaces Based on Microscopic Processes. Reaction Kinetics during Initial Stage of Thermal Oxidation on Si(100) Surface.

SUEMITSU, M. (2002). Recent Progress in Theoretical Study of Formation of Semiconductor Surfaces and Interfaces Based on Microscopic Processes. Reaction Kinetics during Initial Stage of Thermal Oxidation on Si(100) Surface. Hyomen Kagaku, 23(2), 95–103. https://doi.org/10.1380/jsssj.23.95