Heterodimensional technology for ultra low power electronics

Abstract

We describe new heterodimensional technology suitable for ultra low power applications. This technology uses Schottky barrier contacts between three-dimensional metal and two-dimensional electron gas. The low power performance is due to a small capacitance of the 2D-3D junction, the concentration of the depletion layer electric field streamlines in the active channel, suppression of parasitic resistance, small leakage current, and, most of all, due to the total elimination of the narrow channel effect which allows us to scale the device width to submicron dimensions. We present, compare, and discuss measured and simulated I-V and C-V characteristics for the 2D-3D Schottky diode, 2D MESFET and Schottky Gated 2D-3D RTT.