Abstract
As we have seen in Chap. 13, redundancy covers manufacturing defects while ECC takes care of the failures during the life of the device. This chapter deals with error correction codes applied to NAND Flash memories. In fact, when the memory is placed in its final application, different reasons for errors (see Chap. 4) can damage the written information so that it could happen that the read message is not equal to the original anymore [1]. © 2010 Springer Science+Business Media B.V.
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CITATION STYLE
APA
Zhang, T., Marelli, A., & Micheloni, R. (2010). Error correction codes. In Inside NAND Flash Memories (pp. 393–422). Springer Netherlands. https://doi.org/10.1007/978-90-481-9431-5_14
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