Abstract
Direct interband magneto-optical transitions have been observed by means of high resolution electroreflectance using magnetic fields up to 147. 7 kG in the Faraday configuration. Low temperature results are reported for the E//0 transition of Ge and for the E//1 and E//1 plus DELTA //1 edge of InSb.
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CITATION STYLE
APA
Ranvaud, R., Alibert, C., Joullie, A. M., & Cardona, M. (1974). MAGNETO-ELECTROREFLECTANCE IN Ge, InSb AND GaAs. (pp. 536–540). B. G. Teubner. https://doi.org/10.1007/978-3-322-94774-1_91
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