Characteristic of AZO/SiCO film by X-ray diffraction pattern and X-ray photoelectron spectroscopy

Abstract

Effect of polarity in SiCO film as gate insulator for AZO-TFT was researched. The aluminum doped ziinc oxide films were deposited on SiOC/p-Si wafer by a RF magnetron sputtering system. Polarity in SiCO film with increasing the oxygen gas flow rates changed, and SiCO film lowering polarity was observed the chemical shift in the binding energy such as Si 2p and C 1s, because of lowering the polarity due to chemical reactions between CH group and OH group as the opposite polar sites by high plasma energy. Oxidation of Si atoms will lead to a chemical shift to move higher binding energy in O 1s spectra, due to the additional potential modulation with the Si nanocrystallites by a long range Coulombic interaction of oxygen ions. The chemical shift after AZO deposition on SiCO film made was attributed to defects owing to the Vo and Zni and the valence band in AZO at interfaces between AZO and SiCO films. AZO grown on SiCO film including polar sites showed high on current in transfer characteristic of TFT because of increase of the trap charge owing to the defects. © 2012 Springer-Verlag Berlin Heidelberg.