Studies on Nanostructured V2O5 Deposited by Reactive DC Magnetron Sputtering

Abstract

Nanostructured V2O5 thin films were deposited on to cleaned Si (100) substrates using reactive DC magnetron sputtering technique at various substrate temperatures (Ts). The grain sizes of the films were around 140–210 nm. The field emission-scanning electron micrographs showed nanosheet like structure grown perpendicular to substrate. The optical bandgap energy of the films increased with increase in Ts. The films deposited at 100 °C exhibited a temperature coefficient of resistance (TCR) value of −2.5%/ °C.