On the incorporation of indium in InAs-based quantum structures

Abstract

Transmission electron microscopy (TEM) was applied to study In segregation during molecular beam epitaxy (MBE) growth of InAs-based quantum-dot (QD) structures with a focus on achieving QD luminescence at the technologically relevant wavelength of 1.3 μm. Quantitative composition analyses were carried out with the composition evaluation by lattice fringe analysis (CELFA) technique and In-segregation efficiencies were determined on the basis of atomic-scale composition profiles. The effect of the InAs-deposition rate on the In distribution was studied in detail which needs to be low, in the 0.005 ML/s regime to achieve long-wavelength emission. Further minimization of In-segregation induced intermixing can be achieved by lowering the substrate temperature during GaAs cap layer growth. Finally, a procedure is presented to extract the real composition of QDs taking into account their three-dimensional morphology and embedding in a GaAs cap layer. © 2010 IOP Publishing Ltd.