Electroluminescent Mechanisms of Rare-Earth-Doped ZnS Thin Films

  • Benalloul P
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Abstract

A.C. thin films electroluminescent (E.L.) devices with ZnS host matrix and Inoguchi structure (MISIM) [1] have a simpler and more definite structure than Destriau ones. These devices work under high a.c. electric field. Müller [2] has listed and discussed the various processes which occur when the device is operating.

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Benalloul, P. (1989). Electroluminescent Mechanisms of Rare-Earth-Doped ZnS Thin Films (pp. 36–43). https://doi.org/10.1007/978-3-642-93430-8_6

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