We studied the effects of dielectric change in the chemical composition and in the realization procedures under radiation exposure. We have compared the radiation effects on Ge-doped and F-doped fibers an d preforms: the first play a crucial role in the photosensitivity property, the second improves the dielectric radiation hardness even at low concentrations. The use of different spectroscopic techniques (RIA, OA, EPR) allow the identification of the point defect formation mechanisms at the origin of the optical degradation properties. © EDP Sciences, 2009.
CITATION STYLE
Origlio, G., Girard, S., Boscaino, R., Boukenter, A., Cannas, M., & Ouerdane, Y. (2009). Optical and photonic material hardness for energetic environments. In UVX 2008 - 9e Colloque sur les Sources Coherentes et Incoherentes UV, VUV et X: Applications et Developpements Recents (pp. 127–132). EDP Sciences. https://doi.org/10.1051/uvx/2009020
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