We apply time-resolved four-wave mixing as a novel tool to study resonant tunneling of carriers in semiconductor heterostructures. The polarization decay of excitons in a quantum well is much faster when the alignment of the electron levels in adjacent wells leads to resonant tunneling and subsequent scattering of the carriers.
CITATION STYLE
Leo, K., Shah, J., Göbel, E. O., Damen, T. C., Köhler, K., & Ganser, P. (1990). Tunneling in semiconductor heterostructures studied by subpicosecond four-wave mixing. Applied Physics Letters, 56(20), 2031–2033. https://doi.org/10.1063/1.103008
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