Measurements of minority-carrier diffusion length in n-CulnS2 by electron-beam-induced current method

Abstract

The diffusion length of minority carriers in n-CuInS2 samples is examined with electron-beam-induced current (EBIC) technique in vertical and planar configuration. Theories for the interpretation of the EBIC data from the experiments are reported. The holes as minority carriers show a diffusion length in the range of 1 μm, which is promising for high efficient solar energy conversion.