We report the transport characteristics of a novel transistor based on the electronic structure modulation of the channel. The gate voltage-controlled current modulation arises from the bandwidth manipulation of a midgap or a near-midgap state. We show that the transistor exhibits a gain and overcomes the 2.3 kBT/decade thermal limit in the inverse subthreshold slope where kB is the Boltzmann constant. The unique device physics also opens up many novel applications.
CITATION STYLE
Raza, H. (2013). Electronic structure modulation for low-power switching. Nanoscale Research Letters, 8(1). https://doi.org/10.1186/1556-276x-8-74
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