Oxygen incorporation in Ti2 AlC thin films

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Abstract

Thin films of Ti2 AlC MAX phase have been deposited using a multiple cathode pulsed cathodic arc. Evidence for substantial oxygen incorporation in the MAX phase is presented, likely originating from residual gas present in the vacuum chamber during deposition. The characteristic MAX phase crystal structure is maintained, in agreement with ab initio calculations, supporting substitutional O in C lattice positions. On the basis of these results, we propose the existence of a MAX phase-like material with material properties tuned by the incorporation of oxygen. Additionally, possible unintentional O incorporation in previously reported MAX phase materials is suggested. © 2008 American Institute of Physics.

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Rosen, J., Persson, P. O. Å., Ionescu, M., Kondyurin, A., McKenzie, D. R., & Bilek, M. M. M. (2008). Oxygen incorporation in Ti2 AlC thin films. Applied Physics Letters, 92(6). https://doi.org/10.1063/1.2838456

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