Well-aligned single crystalline GaN nanowires were epitaxially grown on Al2O3 by molecular beam epitaxy. Controlled growth of the nanowires is achieved by tuning the V/III ratio during growth. Oxidised single crystalline catalyst droplets of a cubic symmetry are observed on the top surface of the nanowires. Adaptation of the Cubic lattice on the wurtzite tip is realized via the introduction of a dense network of misfit dislocations at the interface. The {100} lattice spacing of the oxide droplets is found to be very close to its strain-free value, indicating almost full relaxation by the misfit dislocation network.
CITATION STYLE
Kehagias, T., Komninou, P., Dimitrakopulos, G. P., Sahonta, S.-L., Chèze, C., Geelhaar, L., … Karakostas, T. (2008). Epitaxial Growth of Single Crystalline GaN Nanowires on (0001) Al2O3. In Microscopy of Semiconducting Materials 2007 (pp. 225–228). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_49
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