The filled skutterudite CeOs4As12: A hybridization gap semiconductor

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Abstract

X-ray diffraction, electrical resistivity, magnetization, specific heat, and thermoelectric power measurements are presented for single crystals of the new filled skutterudite compound CeOs4As12, which reveal phenomena that are associated with f-electron-conduction electron hybridization. Valence fluctuations or Kondo behavior dominates the physics down to T ∼ 135 K. The correlated electron behavior is manifested at low temperatures as a hybridization gap-insulating state. The small energy gap Δ1/ kB ∼ 73 K, taken from fits to electrical resistivity data, correlates with the evolution of a weakly magnetic or nonmagnetic ground state, which is evident in the magnetization data below a coherence temperature T coh ∼ 45 K. Additionally, the low-temperature electronic specific heat coefficient is small, γ ∼ 19 mJ/mol K2. Some results for the nonmagnetic analogue compound LaOs4As12 are also presented for comparison purposes. © 2008 by The National Academy of Sciences of the USA.

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Baumbach, R. E., Ho, P. C., Sayles, T. A., Maple, M. B., Wawryk, R., Cichorek, T., … Henkie, Z. (2008). The filled skutterudite CeOs4As12: A hybridization gap semiconductor. Proceedings of the National Academy of Sciences of the United States of America, 105(45), 17307–17311. https://doi.org/10.1073/pnas.0808991105

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