Ordered CuIn(1-x)GaxSe2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting. © 2012 Li et al.; licensee Springer.
CITATION STYLE
Li, M., Zheng, M., Zhou, T., Li, C., Ma, L., & Shen, W. (2012). Fabrication and characterization of ordered CuIn(1-x)GaxSe2 nanopore films via template-based electrodeposition. Nanoscale Research Letters, 7(1), 1–6. https://doi.org/10.1186/1556-276X-7-675
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