Dependence of track etching kinetics on chemical reactivity around the ion path

Abstract

Etching kinetics of swift heavy ions (SHI) tracks in olivine is investigated in frame of experimentally verified numerical approach. The model takes into account variation of induced chemical reactivity of the material around the whole ion trajectory with the nanometric accuracy. This enables a quantitative description of wet chemical etching of SHI tracks of different lengths and orientations towards to the sample surface. It is demonstrated that two different modes of etching, governed by diffusion of etchant molecules and by their reaction with the material must be observed in experiments using techniques with different resolution thresholds. Applicability limits of the optical microscopy for detection of heavy ion parameters by measuring of the lengthwise etching rates of the ion track are discussed.